Batch Furnace
  • Product
  • Product
  • Batch Furnace
Features
1
Temp. uniformity Gen.2 Glass~Gen.8 Glass
  - On the substrate ±3℃, in between substrates ±3℃, in chamber ±3℃

2
High productivity
  - Designed for multi substrates input system maximizing productivity

3
Optimized structure for multiple processes
  - Applicable for LTPS TFT LCD/AMOLED, Oxide TFT LCD/AMOLED, Flexible process

4
Minimized heat loss
  - Hot wall type furnace structure applied

5
Low operating cost
  - Long lasting component with high durability
Applicable process
1
DeHydrogenation
  - Excellent temp. uniformity and substrate stability
  - Preventing Pin-hole by removing Hydrogens
  - No warpage issue even with thin substrate

2
Dopant activation
  - Minimizing pattern deviation (G-to-G & L-to-L variation)
  - Rapid cooling system for controling shrinkage issue
  - Preventing warpage issue

3
Hydrogenation
  - Securing lattice structure by distributing Hydrogenation
  - Low power consumption

4
IGZO thermal process
  - Water vapor ambient to enhance annealing efficiency
  - Proprietary nozzle design for uniform vapor distribution
  - Precise control of O₂: H₂O mixture
Product descriptions
A thin a-si silicon layer deposited by PECVD contains 10~15% of hydrogen.
DeHydrogenation process is to detach hydrogens from substrate,
thus prevents damages from explosion of hydrogens.
Features
- H₂ < 1% , substrate damage prvention
- Short processing time, Rapid cooling
- Exellent productivity by high temp. & rapid thermal process
- Temp. uniformity by chambers and substrates
- pre-compaction by rapid cooling
- No warpage issue even with thin substrate
- Capability of handling larger size substrate up to 2~8 Gen.
Applicable process
- LTPS LCD, LTPS AMOLED, Flexible LTPS AMOLED
Product descriptions
Dopant activation is to arrange dopant in a regular pattern without leakage current and
recover substrate from its damage by heavy dopant distribution for
channel forming in Ion Implantation process.
Features
- multi-slot system for high productivity
- Capability of handling larger size substrate up to 2~8 Gen.
- Low power consumption
Applicable process
- LTPS LCD, LTPS AMOLED, Flexible LTPS AMOLED
Product descriptions
Redistributing hydrogens on substrate containing no hydrogens by
dehydrogenation process enhances securing lattice structure.
Features
- Multi-slot system for high productivity
- Short processing time, Rapid cooling
- O₂ concentration control
- Low power consumption
- Capability of handling larger size substrate up to 2~8 Gen.
Applicable process
- LTPS LCD, LTPS AMOLED, Flexible LTPS AMOLED
Product descriptions
Oxide TFT is gaining more popularity since it has better mobility than a-si TFT and
better uniformity than Poly-si TFT. Oxide or IGZO annealing system is used for
Oxide TFT manufacturing thermal process to enhance performance of
free electrons produced by chemical reaction of IGZO materials.
Features
- Water vapor ambient to enhance annealing efficiency
- Proprietary nozzle design for uniform vapor distribution
- Precise control of O₂: H₂O mixture
- Capability of handling larger size substrate up to 2~8 Gen.
Applicable process
- IGZO TFT Active layer, ESL, BCE thermal process