Inline RTA
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  • Product
  • Inline RTA
Features
1
Temperature Uniformity GEN。2nd Glass~Gen。8th Glass)
  - On the substrate ±3℃, In between substrates ±3℃

2
High temperature Thermal process
  - Substrate stability : Minimizing warpage and shrinkage issues
  - Thermal annealing process for high definition display above 400ppi

3
Optimized structure for multiple processes
  - Separate temperature control by chamber
  - Separate moving control by chamber

4
Minimized heat loss
  - Hot wall type furnace

5
Low operating cost
  - Long lasting component with high durability
Applicable process
1
Pre-compaction
  - Higer temperature needed at least 50℃~100℃ more compared to RTA process(650℃~720℃)
  - 3times more cooling time and 1/3 times less processing speed needed compared to RTA process(<20℃/min)

2
Changing a-si silicon status into poly silicon status
  - Upgrading throughput by High speed and temp. process
  - Temperature uniformity:G-to-G,L-to-L,and Ch-to-Ch
  - Rapid cooling :Controling shrinkage issue
  - Controling warpage issue

3
Dopant activation
  - Minimizing pattern deviation (G-to-G & L-to-L variation)
  - Rapid cooling system for controlling shrinkage issue
  - Preventing warpage issue

4
De-Hydrogenation
  - Excellent temp. uniformity and substrate stability
  - Capability of handling larger size substrate up to 2~8 Gen
  - No warpage issue even with thin substrate
Product descriptions
There are increasing demands for high quality Displays with better resolutions.
High resolution display guarantees clean and vivid images but less allows patterning deviation with more pixels.
Thus, when manufacturing high resolution LTPS TFT, adding Pre-compaction process in the first place can prohibit shrinkage of TFT and reduce patterning deviation.
Features
- applied to high temp. process : > 700℃
- Excellent Temp. uniformity by chambers
- No warpage issue even with thin substrate
- Capability of handling larger size substrate up to 2~8 Gen.
Applicable process
- LTPS LCD, LTPS AMOLED
Product descriptions
A thin a-si silicon layer deposited by PECVD contains 10~15% of hydrogen.
De-hydrogenation process is to detach hydrogens from substrate, thus prevents damages from explosion of hydrogens.
Features
- Excellent temp. uniformity and substrate stability
- No warpage issue even with thin substrate
- Capability of handling larger size substrate up to 2~8 Gen.)
Applicable process
- LTPS LCD, LTPS Poly-si crystallization
- High temp. and rapid thermal process for LTPS TFT
Product descriptions
Crystallization converts a-si with low mobility into Poly-si with high mobility optimized for quality displays with quick response time.
Features
- Excellent temp. uniformity and substrate stability
- Capability of handling larger size substrate up to 2~8 Gen.)
- Upgraded thermal efficiency and high temp process capability by 750℃
Applicable process
- LTPS LCD, LTPS Poly-si crystallization
- High temp. and rapid thermal process for LTPS TFT
Product descriptions
Dopant activation is to arrange dopant in a regular pattern without leakage current and recover substrate from its damage by heavy dopant distribution for channel forming in Ion Implantation process.
Features
- Rapid substrate cooling without shrinkage issue
- Capability of handling larger size substrate up to 2~8 Gen.)
- No warpage issue even with thin substrate
Applicable process
- LTPS LCD, LTPS AMOLED, Flexible LTPS AMOLED