核心技术
- Precise and rapid temperature modulation by laser heater
- Reliable and particle free wafer rotation by magnetic levitation
- Temperature feed-back systems using direct measurement of emmisivity of the wafer
- In-situ wafer pre-clean technology integrated into the RTCVD system
工艺介绍
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RTCVD设备可供CMOS 电晶体磊晶Si蒸镀、SiGe蒸镀、3D logic GAA 电晶体及3D DRAM的Si/SiGe多层磊晶薄膜的蒸镀.
RTCVD透过Si及SiGe的急速温度变化, 可实现高生产性能的Si/SiGe叠层磊晶蒸镀.
SPEC
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厚度不均匀性 : <2%
沉积温度不均匀性 : <0.2%
单位/小时
适用领域
Logic : source-drain, channel and contact for FinFET and GAA
DRAM : peri-channel, contact for CMOS transistor and 3D DRAM