RTCVD is Si-based epitaxy deposition equipment using a large-area surface-emitting laser that enables precise temperature control and rapid temperature modulation for optimal multilayered epitaxial film growth with high productivity.
Core Technologies
- Precise and rapid temperature modulation by laser heater
- Reliable and particle free wafer rotation by magnetic levitation
- Temperature feed-back systems using direct measurement of emisivity of the wafer
- In-situ wafer pre-clean technology integrated into the RTCVD
Process
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RTCVD deposits epitaxial Si and SiGe deposition for CMOS transistor and Si/SiGe multilayered epitaxial film deposition for 3D logic GAA transistor and 3D DRAM, next generation DRAM. In particular, Viatron RTCVD realizes highly productive Si/SiGe multi-stacked epitaxial deposition through rapid temperature changes at Si and SiGe deposition steps.
SPEC
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Thickness non-uniformity : <2%
Deposition temperature non-uniformity: <0.2%
High UPH
Applications
Logic : source-drain, channel and contact for FinFET and GAA
DRAM : peri-channel, contact for CMOS transistor and 3D DRAM